We have studied the electronic structure of the interface between6H-SiC{0001} and graphite. On n-type and p-type 6H-SiC(0001) we observeSchottky barriers of Phi_b,n^Si= 0.3+-0.1eV and Phi_b,p^Si=2.7+-0.1eV,respectively. The observed barrier is face specific: on n-type 6H-SiC(000-1) wefind Phi_b,n^C=1.3+-0.1eV. The impact of these barriers on the electricalproperties of metal/SiC contacts is discussed.
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机译：我们已经研究了6H-SiC {0001}和石墨之间的界面的电子结构。在n型和p型6H-SiC（0001）上，我们分别观察到了Phi_b，n ^ Si = 0.3 + -0.1eV和Phi_b，p ^ Si = 2.7 + -0.1eV的肖特基势垒。观察到的势垒是特定于面部的：在n型6H-SiC（000-1）上，我们确定Phi_b，n ^ C = 1.3 + -0.1eV。讨论了这些势垒对金属/ SiC触点电性能的影响。
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